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inchange semiconductor isc product specification isc silicon npn power transistor 2SC3657 description high collector-emitter breakdown voltage- : v (br)ceo = 800v(min) fast switching speed applications switching regulator and high vo ltage switching applications high speed dc-dc converter applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i cm collector current-peak 8 a i b b base current-continuous 2 a i bm base current-peak 5 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3657 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 900 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 1 ma h fe dc current gain i c = 1a; v ce = 5v 10 switching times t r rise time 1.0 s t stg storage time 2.5 s t f fall time i c = 1a; i b1 = -i b2 = -0.4a; r l = 400 ; v cc 400v 1.0 s ? h fe-1 classifications k l m 10-20 15-30 20-40 isc website www.iscsemi.cn 2 |
Price & Availability of 2SC3657 |
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